Mitsubishi Electric QM100DY-H Dual IGBT Power Transistor Module

Mitsubishi Electric QM100DY-H Transistor Module – High-power dual NPN IGBT module designed for fast switching and high-efficiency control in industrial and inverter applications. Provides superior thermal conductivity and rugged reliability for demanding power electronic circuits. Made in Japan. Technical Specifications: Manufacturer: Mitsubishi Electric Corporation Model: QM100DY-H Type: Dual IGBT Power Transistor Module Configuration: Dual NPN IGBTs (half-bridge configuration) Collector Current (Ic): 100 A continuous Collector-Emitter Voltage (Vce): 600 V Collector Power Dissipation (Pc): 500 W (per transistor) Isolation Voltage: 2500 Vrms (collector to baseplate) Gate Threshold Voltage (Vge(th)): 4 – 6 V Typical Switching Frequency: Up to 20 kHz Operating Temperature Range: -40 °C to +125 °C Mounting: Baseplate with screw terminals for power and gate connections Base Material: Aluminum oxide ceramic for high thermal conductivity Dimensions: Approx. 108 mm × 62 mm × 25 mm Applications: Inverters, motor drives, UPS systems, DC-AC converters, power supplies Manufacturer Origin: Mitsubishi Electric (Made in Japan) Please review pictures carefully and let us know if you have any questions!